v rrm = 50 v - 1000 v i f = 12 a features ? high surge capability do-4 package ? types up to 1000 v v rrm parameter symbol 1n1199 (r) 1n1200 (r ) 1n1204 (r) 1n1206 (r ) unit repetitive peak reverse v 50 100 400 600 v 1N1199A thru 1n1206ar 200 1n1202 (r) maximum ratings, at t j = 25 c, unless otherwise specified silicon standard recover y diode conditions voltage v rrm 50 100 400 600 v rms reverse voltage v rms 35 70 280 420 v dc blocking voltage v dc 50 100 400 600 v continuous forward current i f 12 12 12 12 a operating temperature t j -65 to 200 -65 to 200 -65 to 200 -65 to 200 c storage temperature t stg -65 to 200 -65 to 200 -65 to 200 -65 to 200 c parameter symbol 1n1199 (r) 1n1200 (r ) 1n1204 (r) 1n1206 (r ) unit diode forward voltage 1.1 1.1 1.1 1.1 10 10 10 10 a 15 15 15 15 ma thermal characteristics thermal resistance, junction - case r thjc 2.00 2.00 2.00 2.00 c/w 200 a reverse current i r v f 240 240 240 -65 to 200 t c = 25 c, t p = 8.3 ms surge non-repetitive forward current, half sine wave i f,sm v r = 50 v, t j = 25 c i f = 12 a, t j = 25 c t c 150 c conditions 200 140 240 240 -65 to 200 12 electrical characteristics, at tj = 25 c, unless otherwise specified 10 1n1202 (r) 2.00 v r = 50 v, t j = 175 c 1.1 v 15 www.genesicsemi.com 1
1N1199A thru 1n1206ar www.genesicsemi.com 2
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